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1 white electronic designs corporation ? phoenix, az ? (602) 437-1520 hi-reliability product WMF512K8-xxx5 512kx8 monolithic flash, smd 5962-96692 features n access times of 70, 90, 120, 150ns n packaging ? 32 pin, hermetic ceramic, 0.600" dip (package 300) ? 32 lead, hermetic ceramic, 0.400" soj (package 101) ? 32 pin, rectangular ceramic leadless chip carrier (package 601) ? 32 lead flatpack (package 220) n 1,000,000 erase/program cycles minimum n sector erase architecture ? 8 equal size sectors of 64k bytes each ? any combination of sectors can be concurrently erased. also supports full chip erase n organized as 512kx8 n commercial, industrial and military temperature ranges n 5 volt programming. 5v 10% supply. n low power cmos n embedded erase and program algorithms n ttl compatible inputs and cmos outputs n page program operation and internal program control time. note: for programming information refer to flash programming 4m5 application note. may 1999 rev. 3 pin configuration for WMF512K8-xxx5 a 0 - 18 address inputs i/o 0-7 data input/output cs chip select oe output enable we write enable v cc +5.0v power v ss ground pin description 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 a18 a16 a15 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o0 i/o1 i/o2 v ss v cc we a17 a14 a13 a8 a9 a11 oe a10 cs i/o7 i/o6 i/o5 i/o4 i/o3 top view 32 dip 32 csoj 32 flatpack 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 4 3 2 1 32 31 30 14 15 16 17 18 19 20 a7 a6 a5 a4 a3 a2 a1 a0 i/o 0 i/o1 i/o2 v ss i/o3 i/o4 i/o5 i/o6 a14 a13 a8 a9 a11 oe a10 cs i/o7 a12 a15 a16 a18 v cc we a17 pin configuration for WMF512K8-xclx5 top view 32 clcc
2 white electronic designs corporation ? phoenix, az ? (602) 437-1520 WMF512K8-xxx5 absolute maximum ratings (1) dc characteristics - cmos compatible (v cc = 5.0v, v ss = 0v, t a = -55 c to +125 c) parameter unit operating temperature -55 to +125 c supply voltage (v cc ) (1) -2.0 to +7.0 v signal voltage range(any pin except a 9 ) (2) -2.0 to +7.0 v storage temperature range -65 to +150 c lead temperature (soldering, 10 seconds) +300 c data retention mil temp 20 years endurance - erase/program cycles (mil temp) 100,000 min cycles a 9 voltage for sector protect (v id ) (3) -2.0 to +14.0 v parameter symbol conditions unit min max input leakage current i li v cc = 5.5, v in = gnd to v cc 10 m a output leakage current i lox32 v cc = 5.5, v in = gnd to v cc 10 m a v cc active current for read (1) i cc1 cs = v il , oe = v ih , f = 5mhz 50 ma v cc active current for program i cc2 cs = v il , oe = v ih or erase (2) 60 ma v cc standby current i cc4 v cc = 5.5, cs = v ih , f = 5mhz 1.6 ma output low voltage v ol i ol = 8.0 ma, v cc = 4.5 0.45 v output high voltage v oh1 i oh = -2.5 ma, v cc = 4.5 0.85 x v cc v low v cc lock-out voltage v lko 3.2 4.2 v recommended operating conditions parameter symbol min max unit supply voltage v cc 4.5 5.5 v input high voltage v ih 2.0 vcc + 0.5 v input low voltage v il -0.5 +0.8 v operating temp. (mil.) t a -55 +125 c operating temp. (ind.) t a -40 +85 c a 9 voltage for sector protect v id 11.5 12.5 v notes: 1. stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2. minimum dc voltage on input or i/o pins is -0.5v. during voltage transitions, inputs may overshoot v ss to -2.0 v for periods of up to 20ns. maximum dc voltage on output and i/o pins is v cc + 0.5v. during voltage transitions, outputs may overshoot to vcc + 2.0 v for periods of up to 20ns. 3. minimum dc input voltage on a 9 pin is -0.5v. during voltage transitions, a 9 may overshoot vss to -2v for periods of up to 20ns. maximum dc input voltage on a 9 is +13.5v which may overshoot to 14.0 v for periods up to 20ns. capacitance (t a = +25 c) parameter symbol conditions max unit address input capacitance c ad v i/o = 0 v, f = 1.0 mhz 15 pf output enable capacitance c oe v in = 0 v, f = 1.0 mhz 15 pf write enable capacitance c we v in = 0 v, f = 1.0 mhz 15 pf chip select capacitance c cs v in = 0 v, f = 1.0 mhz 15 pf data i/o capacitance c i/o v i/o = 0 v, f = 1.0 mhz 15 pf this parameter is guaranteed by design but not tested. notes: 1. the i cc current listed includes both the dc operating current and the frequency dependent component (at 5 mhz). the frequency componen t typically is less than 2 ma/mhz, with oe at v ih . 2. i cc active while embedded algorithm (program or erase) is in progress. 3. dc test conditions: v il = 0.3v, v ih = v cc - 0.3v
3 white electronic designs corporation ? phoenix, az ? (602) 437-1520 WMF512K8-xxx5 ac characteristics C write/erase/program operations,cs controlled (v cc = 5.0v, v ss = 0v, t a = -55 c to +125 c) ac test circuit ac test conditions notes: v z is programmable from -2v to +7v. i ol & i oh programmable from 0 to 16ma. tester impedance z 0 = 75 w . v z is typically the midpoint of v oh and v ol . i ol & i oh are adjusted to simulate a typical resistive load circuit. ate tester includes jig capacitance. parameter typ unit input pulse levels v il = 0, v ih = 3.0 v input rise and fall 5 ns input and output reference level 1.5 v output timing reference level 1.5 v i current source d.u.t. c = 50 pf eff i ol v 1.5v (bipolar supply) z current source oh parameter symbol -70 -90 -120 -150 unit min max min max min max write cycle time t avav t wc 70 90 120 150 ns write enable setup time t wlel t ws 0000ns chip select pulse width t eleh t cp 45 45 50 50 ns address setup time t avel t as 0000ns data setup time t dveh t ds 45 45 50 50 ns data hold time t ehdx t dh 0000ns address hold time t elax t ah 45 45 50 50 ns chip select pulse width high t ehel t cph 20 20 20 20 ns duration of byte programming operation (1) t whwh1 300 300 300 300 m s sector erase time (2) t whwh2 15 15 15 15 sec read recovery time t ghel 0000ns chip programming time 11 11 11 11 sec chip erase time (3) 64 64 64 64 sec notes: 1. typical value for t whwh1 is 7 m s. 2. typical value for t whwh2 is 1sec. 3. typical value for chip erase time is 8sec.
4 white electronic designs corporation ? phoenix, az ? (602) 437-1520 WMF512K8-xxx5 ac characteristics C write/erase/program operations, we controlled (v cc = 5.0v, t a = -55 c to +125 c) wf512k32-xxx5 wf512k32-xxx5 ac characteristics C read only operations (v cc = 5.0v, t a = -55 c to +125 c) parameter symbol -70 -90 -120 -150 unit min max min max min max min max read cycle time t avav t rc 70 90 120 150 ns address access time t avqv t acc 70 90 120 150 ns chip select access time t elqv t ce 70 90 120 150 ns output enable to output valid t glqv t oe 35 35 50 55 ns chip select to output high z (1) t ehqz t df 20 20 30 35 ns output enable high to output high z (1) t ghqz t df 20 20 30 35 ns output hold from address, cs or oe change, t axqx t oh 0000ns whichever is first notes: 1. guaranteed by design, but not tested parameter symbol -70 -90 -120 -150 unit min max min max min max min max write cycle time t avav t wc 70 90 120 150 ns chip select setup time t elwl t cs 0000ns write enable pulse width t wlwh t wp 45 45 50 50 ns address setup time t avwh t as 0000ns data setup time t dvwh t ds 45 45 50 50 ns data hold time t whdx t dh 0000ns address hold time t whax t ah 45 45 50 50 ns write enable pulse width high t whwl t wph 20 20 20 20 ns duration of byte programming operation (1) t whwh1 300 300 300 300 m s sector erase time (2) t whwh2 15 15 15 15 sec read recovery time before write t ghwl 0000ms v cc set-up time tvcs 50 50 50 50 m s chip programming time 11 11 11 11 sec output enable setup time t oes 0000ns output enable hold time (4) t oeh 10 10 10 10 ns chip erase time (3) 64 64 64 64 sec notes: 1. typical value for t whwh1 is 7 m s. 2. typical value for t whwh2 is 1sec. 3. typical value for chip erase time is 8sec. 4. for toggle and data polling.
5 white electronic designs corporation ? phoenix, az ? (602) 437-1520 WMF512K8-xxx5 ac waveforms for read operations addresses cs oe we outputs high z addresses stable t oe t rc output valid t ce t acc t oh high z t df
6 white electronic designs corporation ? phoenix, az ? (602) 437-1520 WMF512K8-xxx5 notes: 1. pa is the address of the memory location to be programmed. 2. pd is the data to be programmed at byte address. 3. i/o 7 is the output of the complement of the data written to the device. 4. i/o out is the output of the data written to the device. 5. figure indicates last two bus cycles of four bus cycle sequence. write/erase/program operation, we controlled addresses cs oe we data 5.0 v 5555h pa pa t wc t cs pd i/o 7 i/o out t ah t wph t dh t ds data polling t as t rc t wp a0h t oe t df t oh t ce t ghwl t whwh1
7 white electronic designs corporation ? phoenix, az ? (602) 437-1520 WMF512K8-xxx5 ac waveforms chip/sector erase operations addresses cs oe we data v cc 5555h 2aaah 2aaah sa 5555h 5555h t wp t cs t vcs 10h/30h 55h 80h 55h aah aah t ah t as t ghwl t wph t dh t ds notes: 1. sa is the sector address for sector erase.
8 white electronic designs corporation ? phoenix, az ? (602) 437-1520 WMF512K8-xxx5 cs oe we t oe t oe t ce t ch t oh i/o 7 i/o 7 = valid data high z i/o 0-6 = invalid i/o 0-7 valid data t df i/o 7 i/o 0-6 t oeh t whwh 1 or 2 data ac waveforms for data polling during embedded algorithm operations
9 white electronic designs corporation ? phoenix, az ? (602) 437-1520 WMF512K8-xxx5 notes: 1. pa represents the address of the memory location to be programmed. 2. pd represents the data to be programmed at byte address. 3. i/o 7 is the output of the complement of the data written to the device. 4. i/o out is the output of the data written to the device. 5. figure indicates the last two bus cycles of a four bus cycle sequence. addresses we oe cs data 5.0 v 5555h pa pa t wc t ws pd i/o 7 i/o out t ah t cph t cp t dh t ds data polling t as t ghel a0h t whwh1 alternate cs controlled programming operation timings
10 white electronic designs corporation ? phoenix, az ? (602) 437-1520 WMF512K8-xxx5 all linear dimensions are millimeters and parenthetically in inches package 101: 32 lead, ceramic soj 1.27 (0.050) typ 21.1 (0.830) 0.25 (0.010) pin 1 identifier 19.1 (0.750) typ 11.3 (0.446) 0.2 (0.009) 3.96 (0.156) max 0.2 (0.008) 0.05 (0.002) 9.55 (0.376) 0.25 (0.010) 1.27 (0.050) 0.25 (0.010) 0.89 (0.035) radius typ package 220: 32 lead, ceramic flatpack all linear dimensions are millimeters and parenthetically in inches 10.41 (0.410) 0.13 (0.005) 2.60 (0.102) max 0.127 (0.005) + 0.05 (0.002) 0.025 (0.001) pin 1 identifier 1.27 (0.050) typ 19.05 (0.750) typ 10.16 (0.400) 0.51 (0.020) 0.43 (0.017) 0.05 (0.002) 20.83 (0.820) 0.25 (0.010)
11 white electronic designs corporation ? phoenix, az ? (602) 437-1520 WMF512K8-xxx5 package 300: 32 pin, ceramic dip, single cavity side brazed 2.5 (0.100) typ 1.27 (0.050) 0.1 (0.005) 0.46 (0.018) 0.05 (0.002) 0.84 (0.033) 0.4 (0.014) 3.2 (0.125) min 15.04 (0.592) 0.3 (0.012) 0.25 (0.010) 0.05 (0.002) 15.25 (0.600) 0.25 (0.010) 42.4 (1.670) 0.4 (0.016) 4.34 (0.171) 0.79 (0.031) pin 1 identifier all linear dimensions are millimeters and parenthetically in inches
12 white electronic designs corporation ? phoenix, az ? (602) 437-1520 WMF512K8-xxx5 all linear dimensions are millimeters and parenthetically in inches package 601: 32 pin, rectangular ceramic leadless chip carrier 7.62 (0.300) typ 5.08 (0.200) typ 3.81 (0.150) typ 10.16 (0.400) typ 0.38 (0.015) x 45 pin 1 identifier 0.56 (0.022) 0.71 (0.028) 11.25 (0.443) 14.15 (0.457) 13.79 (0.543) 14.15 (0.557) 1.63 (0.064) 2.54 (0.100) pin 1 1.02 (0.040) x 45 3 places
13 white electronic designs corporation ? phoenix, az ? (602) 437-1520 WMF512K8-xxx5 ordering information lead finish: blank = gold plated leads a = solder dip leads v pp programming voltage 5 = 5v device grade: m = military screened -55 c to +125 c i = industrial -40 c to +85 c c = commercial 0 c to +70 c package type: c = 32 pin ceramic dip (package 300) cl = 32 pin rectangular ceramic leadless chip carrier (package 601) de = 32 lead ceramic soj (package 101) fe = 32 lead flatpack (package 220) access time (ns) organization, 512k x 8 flash monolithic white electronic designs corp. w m f 512k 8 - xxx x x 5 x device type sector size speed package smd no. 512k x 8 flash monolithic 64kbyte 150ns 32 pin dip (c) 5962-96692 01hxx 512k x 8 flash monolithic 64kbyte 120ns 32 pin dip (c) 5962-96692 02hxx 512k x 8 flash monolithic 64kbyte 90ns 32 pin dip (c) 5962-96692 03hxx 512k x 8 flash monolithic 64kbyte 70ns 32 pin dip (c) 5962-96692 04hxx 512k x 8 flash monolithic 64kbyte 150ns 32 lead soj (de) 5962-96692 01hyx 512k x 8 flash monolithic 64kbyte 120ns 32 lead soj (de) 5962-96692 02hyx 512k x 8 flash monolithic 64kbyte 90ns 32 lead soj (de) 5962-96692 03hyx 512k x 8 flash monolithic 64kbyte 70ns 32 lead soj (de) 5962-96692 04hyx 512k x 8 flash monolithic 64kbyte 150ns 32 lead flatpack (fe) 5962-96692 01hux 512k x 8 flash monolithic 64kbyte 120ns 32 lead flatpack (fe) 5962-96692 02hux 512k x 8 flash monolithic 64kbyte 90ns 32 lead flatpack (fe) 5962-96692 03hux 512k x 8 flash monolithic 64kbyte 70ns 32 lead flatpack (fe) 5962-96692 04hux

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